High Electron Mobility and Ambipolar Transport in Organic Thin-Film Transistors Based on a π-Stacking Quinoidal Terthiophene

Authors


  • This work was supported by the NSF Materials Research Science and Engineering Center Program (DMR# 0212302). RJC thanks the 3M Science and Technology Foundation for a Doctoral Dissertation Fellowship.

Abstract

Thin-film transistors (TFTs) based on a new n-channel organic semiconductor (DCMT; see Figure) are reported. An electron mobility as high as 0.2 cm2/V s was observed, as well as ambipolar TFT behavior. Variable temperature measurements reveal that electron conduction is activated, with a small activation energy of 35 ± 10 meV. These results demonstrate that quinoidal oligothiophenes are a promising new class of organic semiconductors for TFTs.

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