This work is financially supported by the Ministry of Science and Technology (NRL project) and the Ministry of Education (BK 21 program). D.-J. Jang. thanks the Strategic National R&D Program for the award of grant M1-0214-00-0108. The use of the HRTEM (JEOL, JEM-3000F apparatus) was facilitated by the Research Institute of Advanced Materials at Seoul National University.
Soft Solution Route to Directionally Grown ZnO Nanorod Arrays on Si Wafer; Room-Temperature Ultraviolet Laser†
Article first published online: 20 NOV 2003
Copyright © 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 15, Issue 22, pages 1911–1914, November, 2003
How to Cite
Choy, J.-H., Jang, E.-S., Won, J.-H., Chung, J.-H., Jang, D.-J. and Kim, Y.-W. (2003), Soft Solution Route to Directionally Grown ZnO Nanorod Arrays on Si Wafer; Room-Temperature Ultraviolet Laser. Adv. Mater., 15: 1911–1914. doi: 10.1002/adma.200305327
- Issue published online: 20 NOV 2003
- Article first published online: 20 NOV 2003
- Manuscript Accepted: 7 JUL 2003
- Manuscript Received: 29 APR 2003
- Nanorods, metal oxide, arrayed;
- Solution processing, soft
A high-quality ZnO nanorod array (NRA) has been successfully grown on a Si wafer by a wet-chemical process, where the Si wafer was dip-coated with 4 nm sized ZnO nanoparticles as a buffer and seed layer prior to the crystal growth. It is found that the as-prepared ZnO NRA has a threshold power density of ∼ 70 kW cm–2, which is comparable to the lowest one determined for ZnO NRAs on Al2O3 substrates (40 kW cm–2). The ultraviolet lasing efficiency of the ZnO NRAs is thus similar for both substrates.