Solution-Processed Organic n-Type Thin-Film Transistors

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Abstract

An organic n-type transistor, where both insulating and active layer were processed from solution, has been produced. As the active layer the C60-derivative, [6,6]-phenyl C61-butyric acid methyl ester (PCBM), was used. Its electron mobility was determined to be as high as μe = 4.5 × 10–3 cm2 V–1 s–1 when calcium drain/source contacts were used. If these contacts are formed from more air-stable metals, the device performance decreases.

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