This work was supported by the DARPA Moletronics Program (MDA972–01-C-0072) and ZettaCore, Inc.
Multibit Memory Using Self-Assembly of Mixed Ferrocene/Porphyrin Monolayers on Silicon†
Article first published online: 29 JAN 2004
Copyright © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 16, Issue 2, pages 133–137, January, 2004
How to Cite
Li, Q., Mathur, G., Gowda, S., Surthi, S., Zhao, Q., Yu, L., Lindsey, J. S., Bocian, D. F. and Misra, V. (2004), Multibit Memory Using Self-Assembly of Mixed Ferrocene/Porphyrin Monolayers on Silicon. Adv. Mater., 16: 133–137. doi: 10.1002/adma.200305680
- Issue published online: 29 JAN 2004
- Article first published online: 29 JAN 2004
- Manuscript Accepted: 3 OCT 2003
- Manuscript Received: 11 JUL 2003
- Self-assembled monolayers;
- Silicon wafers
An alternative strategy for achieving multi-bit functionality, which uses mixed self-assembled monolayers of a benzyl alcohol-tethered ferrocene (Fc-BzOH) and a benzyl alcohol-tethered porphyrin (Por-BzOH) on silicon surfaces to achieve a four-state (2-bit) memory element, is presented. The four states include the neutral state and three distinct cationic states obtained upon oxidation of Fc-BzOH (monopositive) and Por-BzOH (monopositive, dipositive) molecules. Conventional cyclic voltammetry, capacitance, and conductance methods have been used to characterize the mixed monolayer.