Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN

Authors


  • This research was performed with the financial support of the Center for Nanostructured Materials Technology under the 21st Century Frontier R&D Program of the Ministry of Science and Technology, Korea.

Abstract

Electroluminescent (EL) devices (see Figure) have been fabricated using n-ZnO nanorod arrays grown on p-GaN epilayers. Simple heteroepitaxial growth yields vertically aligned ZnO nanorods with an abrupt interface on GaN. The p–n heterojunction EL device shows a high current density and strong electroluminescence even at a reverse-bias voltage of 3 V.

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