This work was supported by the National Natural Science Foundation, National 973 Project of the Republic of China, and 985 Project of Tsinghua University.
Fabrication of Large-Area Silicon Nanowire p–n Junction Diode Arrays†
Article first published online: 16 JAN 2004
Copyright © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 16, Issue 1, pages 73–76, January, 2004
How to Cite
Q. Peng, K., P. Huang, Z. and Zhu, J. (2004), Fabrication of Large-Area Silicon Nanowire p–n Junction Diode Arrays. Adv. Mater., 16: 73–76. doi: 10.1002/adma.200306185
- Issue published online: 16 JAN 2004
- Article first published online: 16 JAN 2004
- Manuscript Accepted: 17 SEP 2003
- Manuscript Received: 4 MAR 2003
- Chemical vapor deposition (CVD);
- Nanowires, arrays
Large-area silicon nanowire p–n junction diode arrays (see Figure) have been fabricated by chemical etching of planar silicon p–n junction wafers in aqueous HF solution that contains appropriate amounts of silver nitrate near room temperature. The I–V characteristics have been measured using current-sensing atomic force microscopy, and nonlinear and rectifying electrical transport behavior has been observed.