All-Organic Permanent Memory Transistor Using an Amorphous, Spin-Cast Ferroelectric-like Gate Insulator

Authors


  • This work was supported by the EPSRC under the research grants GR/R88328/01 and GR/S02303/01.

Abstract

An all-organic memory transistor (“FerrOFET”) with a solution- deposited ferroelectric-like nylon gate insulator is demonstrated. Cheaper and easier to build than inorganic ferroelectric transistors, yet with comparable performance and compatible with flexible substrates, this device is suitable for most information storage organic electronics applications. The Figure shows the memory function of the FerrOFET as hysteresis in the transfer characteristics.

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