We thank C. M. Sotomayor Torres, A. Kam, and B. Moerschbacher for help with the nanoimprinting, N. Gaponik and H. Weller for providing the CdTe nanoparticles, M.-B. Meier and I. Gabriniok for help with the cell culture, M. Gleiche for stimulating discussions and the DFG (SFB 424; DFG WI1769) for the financial support.
Self-Organized Complex Patterning: Langmuir–Blodgett Lithography†
Article first published online: 20 APR 2004
Copyright © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 16, Issue 7, pages 619–624, April, 2004
How to Cite
Lenhert, S., Zhang, L., Mueller, J., Wiesmann, H. P., Erker, G., Fuchs, H. and Chi, L. (2004), Self-Organized Complex Patterning: Langmuir–Blodgett Lithography. Adv. Mater., 16: 619–624. doi: 10.1002/adma.200306203
- Issue published online: 20 APR 2004
- Article first published online: 20 APR 2004
- Manuscript Accepted: 24 NOV 2003
- Manuscript Received: 19 SEP 2003
- Lithography, Langmuir–Blodgett;
- Patterning, surface
Self-patterning monolayer films prepared by the Langmuir–Blodgett technique have been used as resists for anisotropic chemical etching of Si 〈100〉. The resulting topographies are transferred onto polymer surfaces to guide the growth of biological cells. This method allows rapid and simple nanolithography of complex nanopatterns over large areas.