Low-Temperature Growth of Well-Aligned β-Ga2O3 Nanowires from a Single-Source Organometallic Precursor

Authors


  • Financial support from the National Science Council in Taiwan under Contract No. NSC 91-2214-E-006-012 is gratefully acknowledged.

Abstract

The growth of well-aligned Ga2O3 nanowires at low temperature (550 °C) is reported (see Figure). A single-source precursor of gallium acetylacetonate is employed as the reactant for the growth of the nanowires by a vapor–liquid–solid route. Structural characterization by X-ray diffraction and transmission electron microscopy reveals that the nanowires are preferentially oriented in the (2?01) direction.

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