The growth of well-aligned Ga2O3 nanowires at low temperature (550 °C) is reported (see Figure). A single-source precursor of gallium acetylacetonate is employed as the reactant for the growth of the nanowires by a vapor–liquid–solid route. Structural characterization by X-ray diffraction and transmission electron microscopy reveals that the nanowires are preferentially oriented in the (2?01) direction.
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