Advanced Materials

Er/Yb Doped Porous Silicon—A Novel White Light Source

Authors


  • The authors acknowledge financial support from Hong Kong RGC Earmarked Grant and the Natural Science Foundation of Guangdong Province (No. 031587).

Abstract

A constant voltage electrochemical doping method, is used in order to successfully introduce elemental erbium, Er and ytterbium, Yb into the pores of porous silicon. Er/Yb doped porous silicon emits efficiently from the UV to near-IR when excited with a 980 nm line laser (see Figure).

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