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Keywords:

  • Dielectric constant;
  • Metal–organic chemical vapor deposition (MOCVD);
  • Perovskites;
  • Thin films

Good quality CaCu3Ti4O12 giant dielectric constant films have been prepared by metal–organic chemical vapor deposition on LaAlO3 (001) substrates, using a multimetal molten precursor source. The growth of the oxide layer by a two-step in-situ process, namely deposition of an amorphous matrix and the consequent in-situ annealing, has resulted in epitaxial (00l) CaCu3Ti4O12 thin films.