Epitaxy on Diamond by Chemical Vapor Deposition: A Route to High-Quality Cubic Boron Nitride for Electronic Applications

Authors


  • This work was supported by the Research Grants Council of Hong Kong (CityU grant 1134/02P).

Abstract

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Heteroepitaxial growth of cubic boron nitride (cBN) on diamond using fluorine-assisted chemical vapor deposition is reported. Since cBN grown on diamond shows extraordinary film adhesion and stability, diamond serves as a universal intermediate layer for growing cBN films on a host of materials. The Figure illustrates the heteroepitaxial relationship between the interfacing materials, i.e, cBN–diamond and diamond–silicon.

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