Communication

Si-Compatible Ion-Selective Oxide Interconnects with High Tunability†

  1. R. Schmuhl1,
  2. J. Sekulic1,
  3. S. Roy Chowdhury1,
  4. C. J. M. van Rijn2,
  5. K. Keizer1,
  6. A. van den Berg3,
  7. J. E. ten Elshof,
  8. D. H. A. Blank1

Article first published online: 17 JUN 2004

DOI: 10.1002/adma.200306660

Issue

Advanced Materials

Advanced Materials

Volume 16, Issue 11, pages 900–904, June, 2004

Additional Information

How to Cite

Schmuhl, R., Sekulic, J., Roy Chowdhury, S., van Rijn, C. J. M., Keizer, K., van den Berg, A., ten Elshof, J. E. and Blank, D. H. A. (2004), Si-Compatible Ion-Selective Oxide Interconnects with High Tunability. Adv. Mater., 16: 900–904. doi: 10.1002/adma.200306660

Author Information

  1. 1

    Inorganic Materials Science, Faculty of Science and Technology, MESA+ Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE, Enschede, The Netherlands

  2. 2

    Aquamarijn Micro Filtration B.V., Beatrixlaan 2, 7255 DB, Hengelo Gld., The Netherlands

  3. 3

    Laboratory of Biosensors, Faculty of Electrical Engineering, MESA+ Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE, Enschede, The Netherlands

  1. †

    Part of this work was financially supported by the Netherlands Technology Foundation (STW).

Publication History

  1. Issue published online: 17 JUN 2004
  2. Article first published online: 17 JUN 2004
  3. Manuscript Accepted: 13 FEB 2004
  4. Manuscript Received: 19 DEC 2003

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Keywords:

  • Alumina;
  • Porous materials;
  • Silica;
  • Titania

A new class of porous oxide interconnects with a regularly perforated SiN support structure is presented here. The method is demonstrated by constructing γ-alumina, MCM-48 silica (see Figure), and amorphous titania interconnects. Ionic transport through the gate is established by externally varying the potential difference across the interconnects, which allows cationic, anionic, or no transport, depending on the magnitude and sign of the applied potential difference.

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