This work was supported by the Deutsche Forschungsgemeinschaft (DFG) under the grants No 436 MOL 113/2/0-1 and FO 258/4-1.
Pores in III–V Semiconductors†
Article first published online: 13 FEB 2003
© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 15, Issue 3, pages 183–198, February, 2003
How to Cite
Föll, H., Langa, S., Carstensen, J., Christophersen, M. and Tiginyanu, I.M. (2003), Pores in III–V Semiconductors. Adv. Mater., 15: 183–198. doi: 10.1002/adma.200390043
- Issue published online: 13 FEB 2003
- Article first published online: 13 FEB 2003
- Etching, electrochemical;
The paper reviews electrochemically etched pores in III–V compound semiconductors (GaP, InP, GaAs) with emphasis on nucleation and formation mechanisms, pore geometries and morphologies, and to several instances of self-organization. Self- organization issues include the formation of single-crystalline two-dimensional hexagonal arrays of pores with lattice constants as small as 100 nm found in InP, synchronized and unsynchronized diameter oscillations coupled to current and voltage oscillations, and pore domain formation. The findings are discussed in relation to pores observed in silicon. Some novel properties of the porous layers obtained in III–V compounds are briefly described.