This work was supported by KOSEF through the QSRC at Dongguk University in 2002.
GaN Nanorods Doped by Hydride Vapor-Phase Epitaxy: Optical and Electrical Properties†
Version of Record online: 13 FEB 2003
© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 15, Issue 3, pages 232–235, February, 2003
How to Cite
Kim, H.-M., Cho, Y.-H. and Kang, T.W. (2003), GaN Nanorods Doped by Hydride Vapor-Phase Epitaxy: Optical and Electrical Properties. Adv. Mater., 15: 232–235. doi: 10.1002/adma.200390053
- Issue online: 13 FEB 2003
- Version of Record online: 13 FEB 2003
- Manuscript Accepted: 17 NOV 2002
- Manuscript Received: 14 AUG 2002
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