Quantum Confinement Observed in ZnO/ZnMgO Nanorod Heterostructures

Authors


  • This research was supported by the National Program for Nanostructured Materials Technology of the Ministry of Science and Technology as one of the 21st century Frontier Programs and in part by the Division of Materials Sciences, U.S. Department of Energy, under contract DE-AC05-00OR22725 with Oak Ridge National Laboratory managed by UT-Battelle, LLC. Extensive use of the facilities at POSTECH is acknowledged.

Abstract

Multiple quantum well nanorods have been fabricated via heteroepitaxial growth of ZnO and ZnMgO (see Figure and also cover). Simple yet accurate thickness control allows the realization of nanosized well structures in individual nanorods that are tunable through the effects of quantum confinement. This approach should be readily extendible to other heteroepitaxial semiconductor nanorods.

Ancillary