This work was supported by the Japan Society for the Promotion of Science (JSPS) Fellowship tenable at the National Institute for Materials Science, Tsukuba, Japan.
Growth of Single-Crystalline Cubic GaN Nanotubes with Rectangular Cross-Sections†
Article first published online: 2 SEP 2004
Copyright © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 16, Issue 16, pages 1465–1468, August, 2004
How to Cite
Hu, J. Q., Bando, Y., Zhan, J. H., Xu, F. F., Sekiguchi, T. and Golberg, D. (2004), Growth of Single-Crystalline Cubic GaN Nanotubes with Rectangular Cross-Sections. Adv. Mater., 16: 1465–1468. doi: 10.1002/adma.200400016
- Issue published online: 2 SEP 2004
- Article first published online: 2 SEP 2004
- Manuscript Accepted: 13 APR 2004
- Manuscript Received: 7 JAN 2004
- Gallium nitride;
The first reported growth of single-crystalline GaN nanotubes with rectangular cross-sections (see Figure) synthesized using Ga2O3 powder and NH3 as reagents is described. It is envisioned that, once the cores are filled with different semiconducting materials of various bandgaps, the materials could be used for interesting electrical and optical nanodevices.