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Advanced Materials

Growth of Single-Crystalline Cubic GaN Nanotubes with Rectangular Cross-Sections

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  • This work was supported by the Japan Society for the Promotion of Science (JSPS) Fellowship tenable at the National Institute for Materials Science, Tsukuba, Japan.

Abstract

The first reported growth of single-crystalline GaN nanotubes with rectangular cross-sections (see Figure) synthesized using Ga2O3 powder and NH3 as reagents is described. It is envisioned that, once the cores are filled with different semiconducting materials of various bandgaps, the materials could be used for interesting electrical and optical nanodevices.

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