Advanced Materials

Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

Authors

  • E. M. C. Fortunato,

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  • P. M. C. Barquinha,

    1. Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, P-2829-516 Caparica, Portugal
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  • A. C. M. B. G. Pimentel,

    1. Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, P-2829-516 Caparica, Portugal
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  • A. M. F. Gonçalves,

    1. Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, P-2829-516 Caparica, Portugal
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  • A. J. S. Marques,

    1. Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, P-2829-516 Caparica, Portugal
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  • L. M. N. Pereira,

    1. Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, P-2829-516 Caparica, Portugal
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  • R. F. P. Martins

    1. Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, P-2829-516 Caparica, Portugal
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  • The authors thank Planar Systems, Inc., Espoo, Finland, for supplying the ITO/ATO glass substrates. This work was partially financed by the Portuguese Science Foundation (FCT-MCIES) through the pluriannual contract of CENIMAT.

Abstract

Fully transparent thin-film transistors (TFTs) are produced at room temperature by radiofrequency magnetron sputtering. Measuring the drain current (IDS) as a function of drain voltage (VDS) at different gate voltages (VGS) shows the TFTs possess “hard saturation” with on-currents of about 0.2 mA (see Figure) and saturation mobilities of 20 cm2 V–1 s–1. The optical and electrical properties and the compatibility of the fabrication process with low-cost plastic substrates show promise for invisible and flexible electronic circuits.

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