Observation of Field-Effect Transistor Behavior at Self-Organized Interfaces

Authors


  • This work was funded by the Engineering and Physical Science Research Council. We thank A. Achen (The Dow Chemical Company) for a specially formulated Dow Cyclotene sample. PKHH thanks St John's College (Cambridge) for a Research Fellowship.

Abstract

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Ultrathin, conformal semiconductor– dielectric bilayers can be fabricated in one step by self-organization (see Figure), without exposing the critical interface to ambient contamination. Low-voltage polymer field-effect transistors using a fluorene–triarylamine copolymer as the p-channel semiconductor and 40–60 nm thick crosslinked bisbenzocyclobutene derivative as the gate dielectric are shown to be robust and reproducible.

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