The thermal stability of thin films of di-indenoperylene (DIP), an organic semiconductor is shown via thermal desorption spectroscopy (TDS) and in-situ X-ray diffraction to be strongly enhanced by aluminum oxide capping layers. Possible mechanisms for the eventual breakdown of the film (which remains crystalline up to 460 °C) at high temperatures are discussed (see Figure).
If you can't find a tool you're looking for, please click the link at the top of the page to "Go to old article view". Alternatively, view our Knowledge Base articles for additional help. Your feedback is important to us, so please let us know if you have comments or ideas for improvement.