TiO2 Inverse Opals Fabricated Using Low-Temperature Atomic Layer Deposition

Authors


  • This work was supported by the U.S. Army Research Office under MURI contract DAAD19-01-1-0603, and the Georgia Institute of Technology Molecular Design Institute under prime contract N00014-95-1-1116 from the Office of Naval Research. We also thank S. Blomquist and the U.S. Army Research Lab for assistance with preliminary ALD studies.

Abstract

original image

High-quality inverse-opal photonic crystals (see Figure) are formed by TiO2 infiltration and subsequent removal of SiO2 opal templates. Low-temperature atomic layer deposition followed by annealing yields highly conformal infiltrations with extremely smooth surfaces (less than 1 nm root-mean-square roughness) and filling fractions of ∼ 88 %. Photonic-bandgap properties were determined using UV-vis reflectivity and transmission measurements.

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