Partial financial support of this work is provided by the National Institute of Standards and Technology through an Advanced Technology Grant (70NANB0H3033).
High-Performance Organic Thin-Film Transistors with Solution-Printed Gold Contacts†
Article first published online: 25 JAN 2005
Copyright © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 17, Issue 2, pages 184–187, January, 2005
How to Cite
Wu, Y., Li, Y., Ong, B. S., Liu, P., Gardner, S. and Chiang, B. (2005), High-Performance Organic Thin-Film Transistors with Solution-Printed Gold Contacts. Adv. Mater., 17: 184–187. doi: 10.1002/adma.200400690
- Issue published online: 25 JAN 2005
- Article first published online: 25 JAN 2005
- Manuscript Accepted: 30 JUN 2004
- Manuscript Received: 6 MAY 2004
- Field-effect transistors, organic
A printable gold precursor composed of functionalized gold nanoparticles in a suitable liquid was used for printing conductive features for organic thin-film transistors (see Figure). A thin-film conductivity of 105 S cm–1 is obtained after annealing at 140 °C under vacuum or 200 °C in ambient conditions. Transistors using source–drain electrodes of this type provide excellent performance, identical to that using vacuum-deposited gold contacts.