Communication

High-Performance n- and p-Type Single-Crystal Organic Transistors with Free-Space Gate Dielectrics†

  1. E. Menard1,
  2. V. Podzorov2,
  3. S.-H. Hur1,
  4. A. Gaur1,
  5. M. E. Gershenson2,
  6. J. A. Rogers

Article first published online: 16 DEC 2004

DOI: 10.1002/adma.200401017

Issue

Advanced Materials

Advanced Materials

Volume 16, Issue 23-24, pages 2097–2101, December, 2004

Additional Information

How to Cite

Menard, E., Podzorov, V., Hur, S.-H., Gaur, A., Gershenson, M. and Rogers, J. (2004), High-Performance n- and p-Type Single-Crystal Organic Transistors with Free-Space Gate Dielectrics. Advanced Materials, 16: 2097–2101. doi: 10.1002/adma.200401017

Author Information

  1. 1

    University of Illinois at Urbana/Champaign, Department of Materials Science and Engineering, Department of Chemistry, Beckman Institute and Seitz Materials Research Laboratory, Urbana, IL 61801, USA

  2. 2

    Rutgers University, Department of Physics and Astronomy, Piscataway, NJ 08854-8019, USA

  1. †

    This work was supported by DARPA under Contract F8650–04-C-7101, the U.S. Department of Energy under grant DEFG02–91-ER45439, the NSF grant DMR-0405208, the NSF grant ECS-0437932 and an NSF NIRT grant. S.-H. Hur acknowledges support from a Korean Science and Engineering Fellowship. Supporting Information is available online from Wiley InterScience or from the author.

Publication History

  1. Issue published online: 16 DEC 2004
  2. Article first published online: 16 DEC 2004
  3. Manuscript Accepted: 21 SEP 2004
  4. Manuscript Received: 27 JUN 2004

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Keywords:

  • Field-effect transistors, organic;
  • Single crystals;
  • Tetracyanoquinodimethane (TCNQ)

Graphical Abstract

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A novel single-crystal organic field-effect transistor (OFET) is described, in which the gate dielectric is replaced by a thin gap that can be occupied by a gas or vacuum. When used in combination with high-quality rubrene or tetracyanoquinodimethane (TCNQ) crystals, n- and p-devices with extremely good mobilities and normalized sub-threshold slopes, representing the ultimate in OFET performance, are realized.

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