This work was supported by DARPA under Contract F8650–04-C-7101, the U.S. Department of Energy under grant DEFG02–91-ER45439, the NSF grant DMR-0405208, the NSF grant ECS-0437932 and an NSF NIRT grant. S.-H. Hur acknowledges support from a Korean Science and Engineering Fellowship. Supporting Information is available online from Wiley InterScience or from the author.
High-Performance n- and p-Type Single-Crystal Organic Transistors with Free-Space Gate Dielectrics†
Version of Record online: 16 DEC 2004
Copyright © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 16, Issue 23-24, pages 2097–2101, December, 2004
How to Cite
Menard, E., Podzorov, V., Hur, S.-H., Gaur, A., Gershenson, M. E. and Rogers, J. A. (2004), High-Performance n- and p-Type Single-Crystal Organic Transistors with Free-Space Gate Dielectrics. Adv. Mater., 16: 2097–2101. doi: 10.1002/adma.200401017
- Issue online: 16 DEC 2004
- Version of Record online: 16 DEC 2004
- Manuscript Accepted: 21 SEP 2004
- Manuscript Received: 27 JUN 2004
Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2089/2004/c1017_s.pdf or from the author.
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