Scanning-Tunneling-Microscopy Based Thermochemical Hole Burning on a New Charge-Transfer Complex and Its Potential for Data Storage


  • This work was supported by The Ministry of Science and Technology of China (973 program, 2001CB6105) and The National Natural Science Foundation of China (NSFC Key project, 90301006). H. L. P acknowledges Prof. Shiwei Zhang for the X-ray crystallographic analysis and Dr. Yunze Long for the conductivity measurements. Supporting Information is available online from Wiley InterScience or from the author.


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Ultrahigh-density data storage is realized using a thermochemical hole-burning technique based on scanning tunneling microscopy (STM). The heating effect induced by the STM current gives rise to localized thermochemical decomposition of an organic charge-transfer complex substrate and subsequent gasification of its low- boiling-point decomposition products. A large array of nanometer-sized holes is recorded on the substrate (see Figure).