W. P., U. K., and K. M. acknowledge financial support from the Deutsche Forschungsgemeinschaft (Schwerpunktprogramm organische Feldeffekttransistoren), the EU project DISCEL (G5RD-CT-2000-00321), and the EU project NAIMO Integrated Project No NMP4-CT-2004-500355. A. T. is grateful for the financial support of KBN project T08E 044 23 (2002-2005).
A Zone-Casting Technique for Device Fabrication of Field-Effect Transistors Based on Discotic Hexa-peri-hexabenzocoronene†
Article first published online: 24 JAN 2005
Copyright © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 17, Issue 6, pages 684–689, March, 2005
How to Cite
Pisula, W., Menon, A., Stepputat, M., Lieberwirth, I., Kolb, U., Tracz, A., Sirringhaus, H., Pakula, T. and Müllen, K. (2005), A Zone-Casting Technique for Device Fabrication of Field-Effect Transistors Based on Discotic Hexa-peri-hexabenzocoronene. Adv. Mater., 17: 684–689. doi: 10.1002/adma.200401171
- Issue published online: 11 MAR 2005
- Article first published online: 24 JAN 2005
- Manuscript Accepted: 28 OCT 2004
- Manuscript Received: 21 JUL 2004
- Field-effect transistors;
- Organized assemblies;
- Semiconductors, organic
Field-effect transistors with highly ordered active layers are fabricated by zone-casting discotic dodecyl-substituted hexa-peri-hexabenzocoronene molecules onto hydrophobic substrates to form semiconducting columnar structures (see Figure). The discs form columns that possess long-range order on the scale of square centimeters, and the devices show order-of-magnitude improvements in charge-carrier mobilities over previously reported devices.