This work was supported by the EPSRC under the research grants GR/R88328/01 and GR/S02303/01.
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Communication
High-Performance Organic Transistors Using Solution-Processed Nanoparticle-Filled High-k Polymer Gate Insulators†
Article first published online: 7 JUN 2005
DOI: 10.1002/adma.200401398
Copyright © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Schroeder, R., Majewski, L. A. and Grell, M. (2005), High-Performance Organic Transistors Using Solution-Processed Nanoparticle-Filled High-k Polymer Gate Insulators. Adv. Mater., 17: 1535–1539. doi: 10.1002/adma.200401398
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Publication History
- Issue published online: 7 JUN 2005
- Article first published online: 7 JUN 2005
- Manuscript Accepted: 18 DEC 2004
- Manuscript Received: 26 AUG 2004
- Abstract
- References
- Cited By
Keywords:
- Composite materials;
- Field-effect transistors, organic;
- Nanoparticles
A polymer matrix filled with nanoparticles, used as the gate material, makes solution-processable, low-voltage, organic transistors possible. The device shown here operates at very low voltages (see Figure). Atomic force microscopy shows a relatively homogeneous film, even with a high filling of nanoparticles.