Advanced Materials

Low-Voltage Transistor Employing a High-Mobility Spin-Coated Chalcogenide Semiconductor

Authors


  • The authors thank C. Dimitrakopoulos for useful discussions, A. Kellock, D. Martinez, D. DiMilia, and R. Pezzi for technical assistance, and A. Afzali for solvent distillation.

Abstract

In2Se3 thin films are spin-coated using a hydrazinium-precursor approach to yield thin-film transistors (TFTs, see Figure). The highly toxic and explosive solvent hydrazine, previously employed for spin-coating SnS2–xSex films, has also been replaced with a more convenient solvent mixture of ethanolamine and dimethyl sulfoxide. Low-voltage operation (< 8 V) of TFTs based on spin-coated In2Se3 yields mobilities as high as 16 cm2 V–1 s–1 and on/off ratios of 106.

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