All-Solution-Processed n-Type Organic Transistors Using a Spinning Metal Process


  • The authors acknowledge Dr. R. R. Das for the careful reading of the manuscript.


An all-solution-processed n-type transistor of soluble fullerene derivatives, based on a photosensitive organic silver precursor route to deposit source and drain metal electrodes, is reported (see Figure). The field-effect mobility of such devices is strongly dependent on the morphology of the spin-cast semiconducting thin film. The devices fabricated in this manner show a higher electron mobility than devices fabricated by vacuum-shadow deposition.

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