Communication

CdSe-Sensitized p-CuSCN/Nanowire n-ZnO Heterojunctions†

  1. C. Lévy-Clément1,
  2. R. Tena-Zaera1,2,
  3. M. A. Ryan1,3,
  4. A. Katty1,
  5. G. Hodes1,4

Article first published online: 7 JUN 2005

DOI: 10.1002/adma.200401848

Issue

Advanced Materials

Advanced Materials

Volume 17, Issue 12, pages 1512–1515, June, 2005

Additional Information

How to Cite

Lévy-Clément, C., Tena-Zaera, R., Ryan, M. A., Katty, A. and Hodes, G. (2005), CdSe-Sensitized p-CuSCN/Nanowire n-ZnO Heterojunctions. Adv. Mater., 17: 1512–1515. doi: 10.1002/adma.200401848

Author Information

  1. 1

    LCMTR, CNRS, 2/8 rue Henri Dunant, 94320 Thiais, France

  2. 2

    University of Valencia, C/Dr. Moliner 50, E-46100 Burjassot, Spain

  3. 3

    Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099, USA

  4. 4

    Department of Materials and Interfaces, Weizmann Institute, 76100 Rehovot, Israel

  1. †

    The authors gratefully acknowledge Dr. Brian O'Regan for fruitful discussions.

Publication History

  1. Issue published online: 7 JUN 2005
  2. Article first published online: 7 JUN 2005
  3. Manuscript Accepted: 10 MAR 2005
  4. Manuscript Received: 10 NOV 2004

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Keywords:

  • Cadmium selenide;
  • Nanocomposites;
  • Nanowires, inorganic;
  • Photovoltaic devices;
  • Solar cells
Thumbnail image of graphical abstract

A fully inorganic analogue of the nanostructured dye-sensitized solar cell is fabricated using an electrochemically grown n-ZnO/CdSe core–shell nanowire array (see Figure). Filling the voids between the nanowires with p-type wide-bandgap CuSCN by a solution-deposition technique leads to an extremely thin solar cell exhibiting 2.3 % energy-conversion efficiency.

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