Direct Nanoimprinting of Si Single Crystals Using SiC Molds for Ordered Anodic Tunnel Etching

Authors

  • K. Nishio,

    1. Department of Applied Chemistry, School of Engineering, Tokyo Metropolitan University, 1-1 Minamiosawa, Hachioji, Tokyo 192-0397, Japan
    2. CREST, JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
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  • K. Yasui,

    1. Department of Applied Chemistry, School of Engineering, Tokyo Metropolitan University, 1-1 Minamiosawa, Hachioji, Tokyo 192-0397, Japan
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  • F. Matsumoto,

    1. Kanagawa Academy of Science and Technology, 5-4-30 Nishihashimoto, Sagamihara, Kanagawa 229-1131, Japan
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  • K. Kanezawa,

    1. Department of Applied Chemistry, School of Engineering, Tokyo Metropolitan University, 1-1 Minamiosawa, Hachioji, Tokyo 192-0397, Japan
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  • H. Masuda

    1. Department of Applied Chemistry, School of Engineering, Tokyo Metropolitan University, 1-1 Minamiosawa, Hachioji, Tokyo 192-0397, Japan
    2. CREST, JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
    3. Kanagawa Academy of Science and Technology, 5-4-30 Nishihashimoto, Sagamihara, Kanagawa 229-1131, Japan
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Abstract

original image

Ordered hole-array structures of Si single crystals (see Figure) are formed by direct imprinting with an SiC mold followed by subsequent anode etching in HF solution. In this process, the ordered array of shallow concaves prepared by direct imprinting can act as starting points for the development of uniform-sized straight holes with high aspect ratios. This process is simple and has a high throughput for the fabrication of ordered Si hole arrays.

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