The work in this paper was partially supported by grants from the Research Grants Council of the Hong Kong Special Administrative Region, China (Project No. CUHK 4247/01P and 401003) and a CUHK Direct Grant 2060277.
Routes to Grow Well-Aligned Arrays of ZnSe Nanowires and Nanorods†
Article first published online: 24 MAY 2005
Copyright © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 17, Issue 11, pages 1405–1410, June, 2005
How to Cite
Zhang, X., Liu, Z., Li, Q., Leung, Y., Ip, K. and Hark, S. (2005), Routes to Grow Well-Aligned Arrays of ZnSe Nanowires and Nanorods. Adv. Mater., 17: 1405–1410. doi: 10.1002/adma.200401891
- Issue published online: 24 MAY 2005
- Article first published online: 24 MAY 2005
- Manuscript Accepted: 3 MAR 2005
- Manuscript Received: 18 NOV 2004
- Chemical vapor deposition, metal–organic;
- Epitaxial growth;
- Nanowires, semiconductor
Well-aligned ZnSe nanowires and nanorods can be grown on ZnSe epilayers on different GaAs substrates, with and without catalyst, by metal–organic chemical vapor deposition. Gold particles affect the number density, growth direction, and the morphology of the resulting nanostructures. In the absence of the gold catalyst, hexagonal nanorods grow along the <111> directions (see Figure). Growth defects on the epilayers may be the nucleation sites of the nanorods.