Thickness Dependence of Mobility in Pentacene Thin-Film Transistors

Authors


  • This work was supported by the CCMR, a Materials Research Science and Engineering Center of the National Science Foundation. A portion of this work was conducted at the Cornell Nanoscale Science and Technology Facility which is supported by the National Science Foundation and NYSTAR.

Abstract

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The field-effect mobility of pentacene transistors saturates when six monolayers of pentacene are deposited on the gate dielectric. This saturation is not caused by the formation of islands, as the early stages of growth have been found to take place in a layer-by-layer fashion, and layer completion continues well past six monolayers (see Figure).

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