Communication

Well-Oriented Silicon Thin Films with High Carrier Mobility on Polycrystalline Substrates†

  1. A. T. Findikoglu,
  2. W. Choi,
  3. V. Matias,
  4. T. G. Holesinger,
  5. Q. X. Jia,
  6. D. E. Peterson

Article first published online: 7 JUN 2005

DOI: 10.1002/adma.200500040

Issue

Advanced Materials

Advanced Materials

Volume 17, Issue 12, pages 1527–1531, June, 2005

Additional Information

How to Cite

Findikoglu, A. T., Choi, W., Matias, V., Holesinger, T. G., Jia, Q. X. and Peterson, D. E. (2005), Well-Oriented Silicon Thin Films with High Carrier Mobility on Polycrystalline Substrates. Adv. Mater., 17: 1527–1531. doi: 10.1002/adma.200500040

Author Information

  1. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA

  1. †

    The authors thank J. O. Willis, I. H. Campbell, B. J. Gibbons, D. Smith, L. Stan, and P. N. Arendt for useful discussions and technical help. A.T.F. and W.C. acknowledge funding from Laboratory Directed Research and Development, Exploratory Research at Los Alamos National Laboratory.

Publication History

  1. Issue published online: 7 JUN 2005
  2. Article first published online: 7 JUN 2005
  3. Manuscript Accepted: 16 MAR 2005
  4. Manuscript Received: 7 JAN 2005

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Keywords:

  • Epitaxial growth;
  • Ion-assisted deposition;
  • Silicon;
  • Thin films
Thumbnail image of graphical abstract

Si thin films, grown using ion-beam-assisted deposition of buffer layers on polycrystalline metal-alloy tapes (see Figure), show out-of-plane and in-plane mosaic spreads of 0.8° and 1.3°, respectively, and a room-temperature Hall mobility of 89 cm2 V–1 s–1 for a doping concentration of 4.4 × 1016 cm–3. These results provide proof-of-concept for a promising materials technology that does not require lattice-matched, single-crystal substrates for deposition of well-oriented, high-carrier-mobility semiconductor thin films.

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