Communication

Organic Donor–Acceptor System Exhibiting Electrical Bistability for Use in Memory Devices†

  1. C. W. Chu,
  2. J. Ouyang,
  3. J.-H. Tseng,
  4. Y. Yang

Article first published online: 24 MAY 2005

DOI: 10.1002/adma.200500225

Issue

Advanced Materials

Advanced Materials

Volume 17, Issue 11, pages 1440–1443, June, 2005

Additional Information

How to Cite

Chu, C. W., Ouyang, J., Tseng, J.-H. and Yang, Y. (2005), Organic Donor–Acceptor System Exhibiting Electrical Bistability for Use in Memory Devices. Adv. Mater., 17: 1440–1443. doi: 10.1002/adma.200500225

Author Information

  1. Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095, USA

  1. †

    The authors deeply appreciate financial support from the US Air Force Office of Scientific Research (Dr. Charles Lee, grant number FA9550-04-0215).

Publication History

  1. Issue published online: 24 MAY 2005
  2. Article first published online: 24 MAY 2005
  3. Manuscript Accepted: 9 MAR 2005
  4. Manuscript Received: 31 JAN 2005

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Keywords:

  • Data storage;
  • Electronics
Thumbnail image of graphical abstract

An all-organic electrically bistable device and its application in non-volatile memory is reported (see Figure). The switching mechanism is attributed to electric-field-induced charge transfer from an organic electron donor to an acceptor, so that the device switches from a low- to a high-conductivity state. This device provides a new direction for data-storage technology based on organic composites.

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