Official contribution of the National Institute of Standards and Technology; not subject to copyright in the United States. D. M. D. acknowledges the NIST/NRC postdoctoral program. The authors gratefully acknowledge funding from DOE-BES, AFOSR, and MARCO. Certain equipment, instruments or materials are identified in this paper in order to adequately specify the experimental details. Such identification does not imply recommendation by the National Institute of Standards and Technology nor does it imply the materials are necessarily the best available for the purpose.
Direct Correlation of Organic Semiconductor Film Structure to Field-Effect Mobility†
Article first published online: 30 AUG 2005
Copyright © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 17, Issue 19, pages 2340–2344, October, 2005
How to Cite
DeLongchamp, D. M., Sambasivan, S., Fischer, D. A., Lin, E. K., Chang, P., Murphy, A. R., Fréchet, J. M. J. and Subramanian, V. (2005), Direct Correlation of Organic Semiconductor Film Structure to Field-Effect Mobility. Adv. Mater., 17: 2340–2344. doi: 10.1002/adma.200500263
- Issue published online: 23 SEP 2005
- Article first published online: 30 AUG 2005
- Manuscript Accepted: 12 MAY 2005
- Manuscript Received: 4 FEB 2005
- Field-effect transistors, organic;
- Thin films, organic
Near-edge X-ray fine structure spectroscopy is used to measure simultaneous chemical conversion, molecular ordering, and defect formation in soluble oligothiophene precursor films. Film structure is correlated to OFET performance. Molecular orientation is determined by evaluating antibonding orbital overlap with the polarized electric field vector of incident soft X-rays (see Figure and cover). Upon conversion, the molecules become vertically oriented, allowing π overlap in the plane of hole transport.