SEARCH

SEARCH BY CITATION

Keywords:

  • Gallium;
  • Heterojunctions;
  • Nanowires, metal;
  • Nanowires, semiconductor;
  • Silica;
  • Zinc sulfide
Thumbnail image of graphical abstract

Ga–ZnS nanowire heterojunctions, uniformly sheathed with very thin silica nanotubes, are prepared via thermal evaporation of SiO, Ga2O3, and ZnS powder precursors followed by thermochemical reaction. Some nanowires have a single junction (Figure, top), while others have multiple junctions (bottom). The Ga–ZnS interface is particularly sensitive to electron-beam irradiation (EBI), making possible an EBI-driven switch.