This work was performed through the Special Coordination Funds for Promoting Science and Technology from MEXT, Japan.
Fabrication of Silica-Shielded Ga–ZnS Metal–Semiconductor Nanowire Heterojunctions†
Article first published online: 4 AUG 2005
Copyright © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 17, Issue 16, pages 1964–1969, August, 2005
How to Cite
Hu, J., Bando, Y., Zhan, J. and Golberg, D. (2005), Fabrication of Silica-Shielded Ga–ZnS Metal–Semiconductor Nanowire Heterojunctions. Adv. Mater., 17: 1964–1969. doi: 10.1002/adma.200500317
- Issue published online: 4 AUG 2005
- Article first published online: 4 AUG 2005
- Manuscript Accepted: 25 APR 2005
- Manuscript Received: 14 FEB 2005
- Nanowires, metal;
- Nanowires, semiconductor;
- Zinc sulfide
Ga–ZnS nanowire heterojunctions, uniformly sheathed with very thin silica nanotubes, are prepared via thermal evaporation of SiO, Ga2O3, and ZnS powder precursors followed by thermochemical reaction. Some nanowires have a single junction (Figure, top), while others have multiple junctions (bottom). The Ga–ZnS interface is particularly sensitive to electron-beam irradiation (EBI), making possible an EBI-driven switch.