Advanced Materials

Fabrication of Silica-Shielded Ga–ZnS Metal–Semiconductor Nanowire Heterojunctions

Authors

  • J. Hu,

    1. International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Namiki 1–1, Tsukuba, Ibaraki 305-0044, Japan
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  • Y. Bando,

    1. International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Namiki 1–1, Tsukuba, Ibaraki 305-0044, Japan
    2. Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Namiki 1–1, Tsukuba, Ibaraki 305-0044, Japan
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  • J. Zhan,

    1. Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Namiki 1–1, Tsukuba, Ibaraki 305-0044, Japan
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  • D. Golberg

    1. Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Namiki 1–1, Tsukuba, Ibaraki 305-0044, Japan
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  • This work was performed through the Special Coordination Funds for Promoting Science and Technology from MEXT, Japan.

Abstract

Ga–ZnS nanowire heterojunctions, uniformly sheathed with very thin silica nanotubes, are prepared via thermal evaporation of SiO, Ga2O3, and ZnS powder precursors followed by thermochemical reaction. Some nanowires have a single junction (Figure, top), while others have multiple junctions (bottom). The Ga–ZnS interface is particularly sensitive to electron-beam irradiation (EBI), making possible an EBI-driven switch.

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