Sub-10 nm High-Aspect-Ratio Patterning of ZnO Using an Electron Beam

Authors


  • The authors thank Mr. P. A. Bonnet for his assistance in TGA and DTA studies.

Abstract

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An electron-beam-sensitive zinc naphthenate resist is used to pattern ZnO. Features as small as 7 nm and with an aspect ratio of ∼ 9 can be patterned. Size reduction to ∼ 5 nm is observed when these patterns are heat treated to give crystalline ZnO (see Figure). The functionality of ZnO is confirmed via photoluminescence studies.

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