Selective ambipolar transport in solution-processed polymer ferroelectric field-effect transistors (FeFETs) is reported. Depending on the polarization state of the ferroelectric, either remanent hole or electron accumulation is achieved in the transistor, as illustrated by a butterfly-shaped current–voltage (I–V) transfer curve (see Figure). For memory purposes, the polarity of the channel can be easily read using the change in drain current in response to a small gate voltage.
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