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An Organic Field-Effect Transistor with Programmable Polarity

Authors


  • The authors thank J. C. Hummelen for supplying PCBM and A. Hadipour for helpful discussions. The authors gratefully acknowledge financial support by the Dutch Science Foundation NWO/FOM and the EC (project PolyApply IST-IP-507143).

Abstract

Selective ambipolar transport in solution-processed polymer ferroelectric field-effect transistors (FeFETs) is reported. Depending on the polarization state of the ferroelectric, either remanent hole or electron accumulation is achieved in the transistor, as illustrated by a butterfly-shaped current–voltage (I–V) transfer curve (see Figure). For memory purposes, the polarity of the channel can be easily read using the change in drain current in response to a small gate voltage.

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