Advanced Materials

Lateral Templating for Guided Self-Organization of Sputter Morphologies

Authors


  • The authors gratefully acknowledge Dimitris Papazoglou for helpful discussions on image analysis. This research was supported by the U.S. Department of Energy under DE-FG02-01ER45947 and by the Harvard MRSEC under NSF-DMR-0213805. K. C. and J. B. were supported by NSF grant DMR-0109641 and by the Cornell MRSEC. A. C. and H. B. G. contributed equally to the work reported here.

Abstract

Spontaneously emerging topographic patterns on a Si(100) substrate are guided to develop long-range order (see Figure) by using prefabricated boundaries on the area on which they organize. The density of topological defects, such as dislocations, is minimized when the ratio of the spacing between boundaries to the naturally arising spatial period is near an integer value.

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