Control of Carrier Density by a Solution Method in Carbon-Nanotube Devices


  • This work has been partly supported by a grant from the Ministry of Education, Culture, Sport, Science, and Technology, Japan (16681009).


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A new method for controlling the hole density in single-walled carbon nanotube field-effect transistors (SWCNT-FETs) by solution-based chemical doping is presented. The use of organic molecules that adsorb onto SWCNTs from solution is investigated. The transfer characteristics of the SWCNT-FETs exhibit continuous and precise shifts in threshold voltages (see Figure) upon doping with F4TCNQ molecules, even in air.