This work was supported by the Bundesministerium für Bildung und Forschung (BMBF) and by the Deutsche Forschungsgemeinschaft (DFG/SFB 625).
Metal–Organic Chemical Vapor Depostion Synthesis of Hollow Inorganic-Fullerene-Type MoS2 and MoSe2 Nanoparticles†
Article first published online: 16 AUG 2005
Copyright © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 17, Issue 19, pages 2372–2375, October, 2005
How to Cite
Etzkorn, J., Therese, H. A., Rocker, F., Zink, N., Kolb, U. and Tremel, W. (2005), Metal–Organic Chemical Vapor Depostion Synthesis of Hollow Inorganic-Fullerene-Type MoS2 and MoSe2 Nanoparticles. Adv. Mater., 17: 2372–2375. doi: 10.1002/adma.200500850
- Issue published online: 23 SEP 2005
- Article first published online: 16 AUG 2005
- Manuscript Accepted: 19 MAY 2005
- Manuscript Received: 25 APR 2005
- Chemical vapor deposition, metal–organic;
- Hollow particles;
- Nanoparticles, inorganic;
- Nanoparticles, semiconductor
Hollow, nested inorganic fullerene- type MoQ2 (Q = S, Se) nanoparticles (see Figure) are prepared in high yield and on a large scale from organometallic precursors. The MoQ2 nanoparticles are obtained by a gas-phase synthesis (using metal-organic chemical vapor deposition) from Mo(CO)6 and S/Se, followed by a subsequent annealing step.