Ambipolar Field-Effect Transistors Based on Solution-Processable Blends of Thieno[2,3-b]thiophene Terthiophene Polymer and Methanofullerenes


  • The authors are grateful to Ruth Rawcliffe and Saghar Khodabakhsh (Imperial College, London) for Kelvin probe measurements and to Dr. Masayoshi Suzuki from Merck Japan for photoelectron spectroscopy AC-2 measurements.


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Thin-film field-effect transistors showing n- and p-type conduction under different bias conditions are produced from solution-processable ambipolar blends of thieno[2,3-b]thiophene terthiophene polymer and phenyl C61 butyric acid methyl ester (see Figure). Balanced charge transport in this blend is achieved by treating the insulator interface with alkyl-chain silanes. Complementary-like inverters have been fabricated on a single substrate, showing a maximum gain of 65.