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Advanced Materials

A Semiconductor-Nanowire Assembly of Ultrahigh Junction Density by the Langmuir–Blodgett Technique

Authors

  • S. Acharya,

    1. Department of Chemistry and Ilse Katz Center for Meso and Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel
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  • A. B. Panda,

    1. Department of Chemistry and Ilse Katz Center for Meso and Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel
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  • N. Belman,

    1. Department of Materials Engineering and Ilse Katz Center for Meso and Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel
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  • S. Efrima,

    1. Department of Chemistry and Ilse Katz Center for Meso and Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel
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  • Y. Golan

    1. Department of Materials Engineering and Ilse Katz Center for Meso and Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel
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  • Financial support from the US–Israel Binational Science Foundation (BSF project #2002059) and from the EU FP-6 STREP project SEMINANO is gratefully acknowledged. Supporting Information is available online at Wiley InterScience or from the author.

Abstract

The assembly of ultrathin ZnSe nanowires over large areas (see Figure) is achieved by a Langmuir–Blodgett technique in a single step with uniform registry, and without any further secondary technique for alignment. Ultrahigh packing density of junctions, exceeding over 60 × 103 μm–2, is achieved by subsequent deposition of a second two-dimensional nanowire assembly with a controlled angle between the two layers. The resulting network notably surpasses the limit of conventional fabrication techniques.

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