Carbon Nanotubes Coated with Alumina as Gate Dielectrics of Field-Effect Transistors

Authors


  • This research was supported by the National Natural Science Foundation of China (20472089, 90206049), the Major State Basic Research Development Program, and the Chinese Academy of Sciences.

Abstract

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Based on a simple low-temperature chemical-solution method, multiwalled carbon nanotubes (MWCNTs) are coated discontinuously with a alumina gate-dielectric shell (see Figure) and application as p-type field-effect transistors is demonstrated. With a coating thickness of 8 nm, the drain current exceeds the gate current by a factor of 104–105, confirming the excellent gate insulation provided by the alumina dielectric.

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