Pyramid-Shaped Si/Ge Superlattice Quantum Dots with Enhanced Photoluminescence Properties

Authors


  • This research was supported by the Republic of China National Science Council grant No. NSC 94-2215-E-007-003 and Ministry of Education grant No. 91-E-FA04-1-4.

Abstract

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Pyramid-shaped Si/Ge superlattice quantum dots (QDs, see Figure) have been fabricated using self-assembled Ge QDs as a “virtual nanomask” for selective wet etching of the Si/Ge superlattice. The nanodots exhibit an approximately tenfold increase in photoluminescence over conventional Si/Ge superlattice heterostructures.

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