This work was supported by U.S. Air Force Research (AFOSR, F49620-00-1-0310, monitored by Dr. Gerald Witt), U.S. National Science Foundation (CTS 9 876 251), and the Kentucky Science & Engineering Foundation (KSEF-148-502-04-86). The authors acknowledge Dr. Xu at the University of Kentucky for help with HRTEM and Dr. Raul Miranda of the Basic Energy Sciences Division at the U.S. Department of Energy for helpful discussions. Supporting Information is available online from Wiley InterScience or from the author.
Direction-Dependent Homoepitaxial Growth of GaN Nanowires†
Version of Record online: 8 DEC 2005
Copyright © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 18, Issue 2, pages 216–220, January, 2006
How to Cite
Li, H., Chin, A. H. and Sunkara, M. K. (2006), Direction-Dependent Homoepitaxial Growth of GaN Nanowires. Adv. Mater., 18: 216–220. doi: 10.1002/adma.200501716
- Issue online: 11 JAN 2006
- Version of Record online: 8 DEC 2005
- Manuscript Received: 17 AUG 2005
Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2089/2006/c1716_s.pdf or from the author.
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